HGT1S20N60C3RS9A Datasheet. Specs and Replacement
Type Designator: HGT1S20N60C3RS9A 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 164 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Package: TO263
HGT1S20N60C3RS9A Substitution - IGBTⓘ Cross-Reference Search
HGT1S20N60C3RS9A datasheet
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs hgt1s20n60c3rs9a.pdf
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hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .... See More ⇒
Specs: HGT1S1N120CNDS, HGT1S20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VLS9A, HGT1S20N60B3S, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, IRGP4062D, HGT1S20N60C3S, HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3
Keywords - HGT1S20N60C3RS9A transistor spec
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History: HGT1S3N60B3DS
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