All IGBT. HGT1S20N60C3RS9A Datasheet

 

HGT1S20N60C3RS9A Datasheet and Replacement


   Type Designator: HGT1S20N60C3RS9A
   Type: IGBT
   Marking Code: 20N60C3R
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 164 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 87 nC
   Package: TO263
      - IGBT Cross-Reference

 

HGT1S20N60C3RS9A Datasheet (PDF)

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HGT1S20N60C3RS9A

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HGT1S20N60C3RS9A

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

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HGT1S20N60C3RS9A

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HGT1S20N60C3RS9A

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

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Datasheet: HGT1S1N120CNDS , HGT1S20N35G3VL , HGT1S20N35G3VLS , HGT1S20N35G3VLS9A , HGT1S20N60B3S , HGT1S20N60C3 , HGT1S20N60C3R , HGT1S20N60C3RS , FGW75N60HD , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 .

History: IXSP20N60B2

Keywords - HGT1S20N60C3RS9A transistor datasheet

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