All IGBT. APT15GP60BDQ1G Datasheet

 

APT15GP60BDQ1G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT15GP60BDQ1G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 27 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 55 nC
   Package: TO247

 APT15GP60BDQ1G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT15GP60BDQ1G Datasheet (PDF)

 ..1. Size:1026K  apt
 apt15gp60bdq1g.pdf

APT15GP60BDQ1G APT15GP60BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 1.1. Size:253K  apt
 apt15gp60bdq1.pdf

APT15GP60BDQ1G APT15GP60BDQ1G

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope

 3.1. Size:126K  apt
 apt15gp60bdf1.pdf

APT15GP60BDQ1G APT15GP60BDQ1G

APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge

 3.2. Size:202K  microsemi
 apt15gp60bdlg.pdf

APT15GP60BDQ1G APT15GP60BDQ1G

APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applicat

Datasheet: TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G , APT15GT120BRG , APT15GT120SRG , APT13GP120BG , APT13GP120KG , APT15GP60BDLG , IXRH40N120 , APT15GP60KG , APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G .

 

 
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