All IGBT. RJH1CF7RDPQ-80 Datasheet

 

RJH1CF7RDPQ-80 Datasheet and Replacement


   Type Designator: RJH1CF7RDPQ-80
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 62 pF
   Package: TO247
      - IGBT Cross-Reference

 

RJH1CF7RDPQ-80 Datasheet (PDF)

 ..1. Size:97K  renesas
 rjh1cf7rdpq-80.pdf pdf_icon

RJH1CF7RDPQ-80

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 8.1. Size:96K  renesas
 rjh1cf6rdpq-80.pdf pdf_icon

RJH1CF7RDPQ-80

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2010Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

 8.2. Size:96K  renesas
 rjh1cf5rdpq-80.pdf pdf_icon

RJH1CF7RDPQ-80

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

 8.3. Size:96K  renesas
 rjh1cf4rdpq-80.pdf pdf_icon

RJH1CF7RDPQ-80

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

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Datasheet: APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJP63K2DPP-M0 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - RJH1CF7RDPQ-80 transistor datasheet

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