APT40GP90JDQ2 PDF and Equivalents Search

 

APT40GP90JDQ2 Specs and Replacement

Type Designator: APT40GP90JDQ2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 284 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 27 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 325 pF

Package: SOT227

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APT40GP90JDQ2 datasheet

 ..1. Size:455K  apt
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APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low... See More ⇒

 3.1. Size:206K  apt
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APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90JDF2 APT40GP90JDF2 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SS... See More ⇒

 4.1. Size:170K  apt
apt40gp90j.pdf pdf_icon

APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat... See More ⇒

 5.1. Size:440K  apt
apt40gp90b2dq2g.pdf pdf_icon

APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f... See More ⇒

Specs: APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , FGH40N60SFD , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 .

Keywords - APT40GP90JDQ2 transistor spec

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