All IGBT. APT40GP90JDQ2 Datasheet

 

APT40GP90JDQ2 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT40GP90JDQ2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 284 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 27 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 325 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: SOT227

 APT40GP90JDQ2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT40GP90JDQ2 Datasheet (PDF)

 ..1. Size:455K  apt
 apt40gp90jdq2.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 3.1. Size:206K  apt
 apt40gp90jdf2.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90JDF2APT40GP90JDF2900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SS

 4.1. Size:170K  apt
 apt40gp90j.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 5.1. Size:440K  apt
 apt40gp90b2dq2g.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 5.2. Size:159K  apt
 apt40gp90bg.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 5.3. Size:162K  apt
 apt40gp90b.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 5.4. Size:192K  apt
 apt40gp90b2df2.pdf

APT40GP90JDQ2 APT40GP90JDQ2

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

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