All IGBT. APT35GA90S Datasheet

 

APT35GA90S IGBT. Datasheet pdf. Equivalent


   Type Designator: APT35GA90S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 173 pF
   Qgⓘ - Total Gate Charge, typ: 84 nC
   Package: TO268AB

 APT35GA90S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT35GA90S Datasheet (PDF)

 ..1. Size:207K  microsemi
 apt35ga90s.pdf

APT35GA90S APT35GA90S

APT35GA90B APT35GA90S 900V High Speed PT IGBTAPT35GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 0.1. Size:238K  microsemi
 apt35ga90sd15.pdf

APT35GA90S APT35GA90S

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C

 5.1. Size:238K  microsemi
 apt35ga90bd15.pdf

APT35GA90S APT35GA90S

APT35GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 5.2. Size:117K  microsemi
 apt35ga90b.pdf

APT35GA90S APT35GA90S

APT35GA90B 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90Bgate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Datasheet: APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , RJP30E2DPP-M0 , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 .

 

 
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