All IGBT. APT35GA90S Datasheet

 

APT35GA90S Datasheet and Replacement


   Type Designator: APT35GA90S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 173 pF
   Package: TO268AB
      - IGBT Cross-Reference

 

APT35GA90S Datasheet (PDF)

 ..1. Size:207K  microsemi
apt35ga90s.pdf pdf_icon

APT35GA90S

APT35GA90B APT35GA90S 900V High Speed PT IGBTAPT35GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 0.1. Size:238K  microsemi
apt35ga90sd15.pdf pdf_icon

APT35GA90S

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C

 5.1. Size:238K  microsemi
apt35ga90bd15.pdf pdf_icon

APT35GA90S

APT35GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 5.2. Size:117K  microsemi
apt35ga90b.pdf pdf_icon

APT35GA90S

APT35GA90B 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90Bgate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - APT35GA90S transistor datasheet

 APT35GA90S cross reference
 APT35GA90S equivalent finder
 APT35GA90S lookup
 APT35GA90S substitution
 APT35GA90S replacement

 

 
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