APT44GA60B IGBT. Datasheet pdf. Equivalent

   Type Designator: APT44GA60B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 337 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 44 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 358 pF
   Qgⓘ - Total Gate Charge, typ: 128 nC
   Package: TO247

APT44GA60B Transistor Equivalent Substitute - IGBT Cross-Reference Search

APT44GA60B Datasheet (PDF)

..1. Size:219K microsemi
apt44ga60b.pdf

APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

0.1. Size:226K microsemi
apt44ga60bd30c.pdf

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of

0.2. Size:237K microsemi
apt44ga60bd30 apt44ga60sd30.pdf

APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBTAPT44GA60SD30POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

5.1. Size:219K microsemi
apt44ga60s.pdf