APT44GA60BD30 IGBT. Datasheet pdf. Equivalent
Type Designator: APT44GA60BD30
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 337 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 44 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 356 pF
Qgⓘ - Total Gate Charge, typ: 128 nC
Package: TO247
APT44GA60BD30 Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT44GA60BD30 Datasheet (PDF)
apt44ga60bd30 apt44ga60sd30.pdf
APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBTAPT44GA60SD30POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres
apt44ga60bd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
apt44ga60b.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60s.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60sd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
Datasheet: AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , MBQ50T65FDSC , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U .
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