APT44GA60BD30 Specs and Replacement
Type Designator: APT44GA60BD30
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 337 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 44 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 356 pF
Package: TO247
APT44GA60BD30 Substitution - IGBT ⓘ Cross-Reference Search
APT44GA60BD30 datasheet
apt44ga60bd30 apt44ga60sd30.pdf
APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres... See More ⇒
apt44ga60bd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT APT44GA60SD30C POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAK achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of ... See More ⇒
apt44ga60b.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
apt44ga60s.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
Specs: AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , G50T65D , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U .
Keywords - APT44GA60BD30 transistor spec
APT44GA60BD30 cross reference
APT44GA60BD30 equivalent finder
APT44GA60BD30 lookup
APT44GA60BD30 substitution
APT44GA60BD30 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
irfp4668 | mpsa56 | c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488