HGT1S3N60B3DS Datasheet and Replacement
Type Designator: HGT1S3N60B3DS
Type: IGBT + Anti-Parallel Diode
Marking Code: G3N60B3D
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 33.3 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 16 nS
Qg ⓘ - Total Gate Charge, typ: 18 nC
Package: TO263
HGT1S3N60B3DS substitution
HGT1S3N60B3DS Datasheet (PDF)
hgtp3n60b3d hgt1s3n60b3ds.pdf
HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo
Datasheet: HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , GT50JR22 , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , HGT1S5N120CNS .
History: HGT1S3N60A4S | IXGH15N120CD1
Keywords - HGT1S3N60B3DS transistor datasheet
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History: HGT1S3N60A4S | IXGH15N120CD1
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