APT100GN120J Specs and Replacement
Type Designator: APT100GN120J
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 446 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 365 pF
Package: SOT227
APT100GN120J Substitution - IGBT ⓘ Cross-Reference Search
APT100GN120J datasheet
apt100gn120j.pdf
TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in... See More ⇒
apt100gn120jdq4.pdf
APT100GN120JDQ4 1200V, 100A, VCE(ON) = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor... See More ⇒
apt100gn120b2g.pdf
TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum T-Max conduction loss. Easy paralleling is a result of very tight parameter d... See More ⇒
apt100gn60ldq4g.pdf
TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parame... See More ⇒
Specs: APT54GA60BD30 , APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , GT30F131 , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 .
History: APT40GP90JDQ2 | MMIX1X100N60B3H1
Keywords - APT100GN120J transistor spec
APT100GN120J cross reference
APT100GN120J equivalent finder
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History: APT40GP90JDQ2 | MMIX1X100N60B3H1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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