HGT1S3N60C3D Datasheet. Specs and Replacement

Type Designator: HGT1S3N60C3D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 33 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Package: TO262

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HGT1S3N60C3D datasheet

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Specs: HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS, HGT1S3N60B3S, FGH60N60SMD, HGT1S3N60C3DS, HGT1S3N60C3DS9A, HGT1S5N120BNDS, HGT1S5N120BNS, HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A4DS, HGT1S7N60B3

Keywords - HGT1S3N60C3D transistor spec

 HGT1S3N60C3D cross reference
 HGT1S3N60C3D equivalent finder
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