All IGBT. APT64GA90S Datasheet

 

APT64GA90S IGBT. Datasheet pdf. Equivalent

Type Designator: APT64GA90S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 64

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 26

Maximum Collector Capacity (Cc), pF: 318

Package: TO268AB

APT64GA90S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT64GA90S Datasheet (PDF)

1.1. apt64ga90b2d30.pdf Size:226K _igbt_a

APT64GA90S
APT64GA90S

 APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

1.2. apt64ga90ld30.pdf Size:226K _igbt_a

APT64GA90S
APT64GA90S

 APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

1.3. apt64ga90b.pdf Size:199K _igbt_a

APT64GA90S
APT64GA90S

 APT64GA90B APT64GA90S 900V High Speed PT IGBT APT64GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

1.4. apt64ga90s.pdf Size:199K _igbt_a

APT64GA90S
APT64GA90S

 APT64GA90B APT64GA90S 900V High Speed PT IGBT APT64GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Datasheet: APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , IRGBC20S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 .

 


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