APT100GT120JRDL IGBT. Datasheet pdf. Equivalent
Type Designator: APT100GT120JRDL
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 570 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 67 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 6530 pF
Qgⓘ - Total Gate Charge, typ: 685 nC
Package: SOT227
APT100GT120JRDL Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT100GT120JRDL Datasheet (PDF)
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apt100gt120jr.pdf
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apt100gt120ju2.pdf
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apt100gt120ju3.pdf
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Datasheet: APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , GT30F132 , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 .
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