APT200GT60JRDL Specs and Replacement
Type Designator: APT200GT60JRDL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 595 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 160 nS
Coesⓘ - Output Capacitance, typ: 546 pF
Package: SOT227
APT200GT60JRDL Substitution - IGBT ⓘ Cross-Reference Search
APT200GT60JRDL datasheet
apt200gt60jrdl.pdf
TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun- derbolt IGBT offers superior ruggedness and ultrafast switching speed. "UL Recognized" Typical Applications ISOTOP... See More ⇒
apt200gt60jr.pdf
APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo... See More ⇒
apt200gn60j.pdf
TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga... See More ⇒
apt200gn60jdq4.pdf
TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built... See More ⇒
Specs: APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , IRG7S313U , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 , APT80GA90S .
History: APT25GP90BDF1 | APT35GA90B | APT20GF120KR | APT35GP120B2DF2 | APT20GT60KR | APT30GT60KR | APT15GT120SRG
Keywords - APT200GT60JRDL transistor spec
APT200GT60JRDL cross reference
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History: APT25GP90BDF1 | APT35GA90B | APT20GF120KR | APT35GP120B2DF2 | APT20GT60KR | APT30GT60KR | APT15GT120SRG
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