All IGBT. APT200GT60JRDL Datasheet

 

APT200GT60JRDL IGBT. Datasheet pdf. Equivalent

Type Designator: APT200GT60JRDL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 595

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 160

Maximum Collector Capacity (Cc), pF: 546

Package: SOT227

APT200GT60JRDL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT200GT60JRDL Datasheet (PDF)

1.1. apt200gt60jr.pdf Size:199K _igbt_a

APT200GT60JRDL
APT200GT60JRDL

 APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged- ness and ultrafast switching speed. Features • RBSOA and SCSOA Rated • Low Forward Voltage Drop "UL Recognized" • High Frequency Switching to 50KHz • Lo

1.2. apt200gt60jrdl.pdf Size:266K _igbt_a

APT200GT60JRDL
APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun- derbolt IGBT® offers superior ruggedness and ultrafast switching speed. "UL Recognized" Typical Applications ISOTOP

 3.1. apt200gn60jdq4.pdf Size:249K _apt

APT200GT60JRDL
APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 APT200GN60JDQ4 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

3.2. apt200gn60j.pdf Size:197K _apt

APT200GT60JRDL
APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GN60J APT200GN60J 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate re

 3.3. apt200gn60jdq4.pdf Size:524K _igbt_a

APT200GT60JRDL
APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

3.4. apt200gn60j.pdf Size:474K _igbt_a

APT200GT60JRDL
APT200GT60JRDL

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 3.5. apt200gn60b2g.pdf Size:163K _igbt_a

APT200GT60JRDL
APT200GT60JRDL

 APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

Datasheet: APT50GN120B2G , APT50GN120L2DQ2G , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , GT25Q101 , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 , APT80GA90S .

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