All IGBT. HGT1S5N120BNS Datasheet

 

HGT1S5N120BNS Datasheet and Replacement


   Type Designator: HGT1S5N120BNS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 21 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Package: TO263
      - IGBT Cross-Reference

 

HGT1S5N120BNS Datasheet (PDF)

 ..1. Size:82K  1
 hgtp5n120bn hgt1s5n120bns.pdf pdf_icon

HGT1S5N120BNS

HGTP5N120BN, HGT1S5N120BNSData Sheet January 2000 File Number 4599.221A, 1200V, NPT Series N-Channel IGBTs FeaturesThe HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oCNon-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capabilitymembers of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ

 2.1. Size:89K  1
 hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf pdf_icon

HGT1S5N120BNS

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 4.1. Size:87K  1
 hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf pdf_icon

HGT1S5N120BNS

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde

 4.2. Size:126K  1
 hgtp5n120cn hgt1s5n120cns.pdf pdf_icon

HGT1S5N120BNS

HGTP5N120CN, HGT1S5N120CNSData Sheet December 200125A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150

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Datasheet: HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , SGT50T65FD1PT , HGT1S5N120CNDS , HGT1S5N120CNS , HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D .

History: IXXH100N60B3

Keywords - HGT1S5N120BNS transistor datasheet

 HGT1S5N120BNS cross reference
 HGT1S5N120BNS equivalent finder
 HGT1S5N120BNS lookup
 HGT1S5N120BNS substitution
 HGT1S5N120BNS replacement

 

 
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