All IGBT. APT100GN60LDQ4G Datasheet

 

APT100GN60LDQ4G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT100GN60LDQ4G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 135 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 560 pF
   Qgⓘ - Total Gate Charge, typ: 600 nC
   Package: TO264

 APT100GN60LDQ4G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT100GN60LDQ4G Datasheet (PDF)

 0.1. Size:448K  apt
 apt100gn60ldq4g.pdf

APT100GN60LDQ4G APT100GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parame

 4.1. Size:167K  microsemi
 apt100gn60b2g.pdf

APT100GN60LDQ4G APT100GN60LDQ4G

APT100GT60B2R(G)APT100GT60LR(G)600V, 100A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated G Low Forward Voltage DropCEGCE High Frequency Switching t

 6.1. Size:413K  apt
 apt100gn120j.pdf

APT100GN60LDQ4G APT100GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 6.2. Size:181K  microsemi
 apt100gn120jdq4.pdf

APT100GN60LDQ4G APT100GN60LDQ4G

APT100GN120JDQ41200V, 100A, VCE(ON) = 1.7V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 6.3. Size:133K  microsemi
 apt100gn120b2g.pdf

APT100GN60LDQ4G APT100GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2APT100GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum T-Maxconduction loss. Easy paralleling is a result of very tight parameter d

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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