All IGBT. APT100GN60LDQ4G Datasheet

 

APT100GN60LDQ4G Datasheet and Replacement


   Type Designator: APT100GN60LDQ4G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 135 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 560 pF
   Package: TO264
      - IGBT Cross-Reference

 

APT100GN60LDQ4G Datasheet (PDF)

 0.1. Size:448K  apt
apt100gn60ldq4g.pdf pdf_icon

APT100GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parame

 4.1. Size:167K  microsemi
apt100gn60b2g.pdf pdf_icon

APT100GN60LDQ4G

APT100GT60B2R(G)APT100GT60LR(G)600V, 100A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated G Low Forward Voltage DropCEGCE High Frequency Switching t

 6.1. Size:413K  apt
apt100gn120j.pdf pdf_icon

APT100GN60LDQ4G

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 6.2. Size:181K  microsemi
apt100gn120jdq4.pdf pdf_icon

APT100GN60LDQ4G

APT100GN120JDQ41200V, 100A, VCE(ON) = 1.7V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - APT100GN60LDQ4G transistor datasheet

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