1MBI200N-120 IGBT. Datasheet pdf. Equivalent

   Type Designator: 1MBI200N-120
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 250 nS
   Coesⓘ - Output Capacitance, typ: 11600 pF
   Package: M127

1MBI200N-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

1MBI200N-120 Datasheet (PDF)

..1. Size:154K fuji
1mbi200n-120.pdf

IGBT Module1MBI200N-1201200V / 200A 1 in one-packageFeatures High speed switching Voltage drive Low inductance module structureApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Industrial machines, such as Welding machinesMaximum ratings and characteristicsAbsolute maximum ratings (at Tc=25C unless otherw

6.1. Size:511K fuji
1mbi200nk-060.pdf

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byIGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Overcurrent Limiting Function (~3 Times Rated Current)n Maximum Ratings and Characteristics n Equivalent Circuit

7.1. Size:272K fuji
1mbi200u4h-120l-50.pdf

http://www.fujielectric.com/products/semiconductor/1MBI200U4H-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 200A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratin

7.2. Size:609K fuji
1mbi200s-120.pdf

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by1-Pack IGBT1200V1MBI 200S-1201x200AIGBT MODULE ( S-Series ) Outline Drawing Features NPT-Technology Square SC SOA at 10 x IC High Short Circuit Withstand-Capability Small Temperature Depe

7.3. Size:277K fuji
1mbi200hh-120l-50.pdf

http://www.fujielectric.com/products/semiconductor/1MBI200HH-120L-50 IGBT ModulesIGBT MODULE1200V / 200A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25

7.4. Size:581K fuji
1mbi200sa-120.pdf