All IGBT. APT80GP60B2G Datasheet

 

APT80GP60B2G Datasheet and Replacement


   Type Designator: APT80GP60B2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1041 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 735 pF
   Qgⓘ - Total Gate Charge, typ: 280 nC
   Package: TO247
      - IGBT Cross-Reference

 

APT80GP60B2G Datasheet (PDF)

 ..1. Size:92K  apt
 apt80gp60b2g.pdf pdf_icon

APT80GP60B2G

APT80GP60B2600VPOWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 45A GCEC Low Gate Charge

 3.1. Size:91K  apt
 apt80gp60b2.pdf pdf_icon

APT80GP60B2G

APT80GP60B2600VPOWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 45A GCEC Low Gate Charge

 5.1. Size:248K  apt
 apt80gp60jdq3.pdf pdf_icon

APT80GP60B2G

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Lo

 5.2. Size:197K  apt
 apt80gp60jdf3.pdf pdf_icon

APT80GP60B2G

TYPICAL PERFORMANCE CURVES APT80GP60JDF3APT80GP60JDF3600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized" Low Conduction Loss 100 kHz ope

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4PC30F

Keywords - APT80GP60B2G transistor datasheet

 APT80GP60B2G cross reference
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 APT80GP60B2G replacement

 

 
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