MPMD100B120RH Specs and Replacement
Type Designator: MPMD100B120RH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 518 pF
Package: 7DM3 MPMD100B120RH Substitution - IGBT ⓘ Cross-Reference Search
MPMD100B120RH datasheet
mpmd100b120rh.pdf
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa... See More ⇒
mpmd150b120rh.pdf
MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ... See More ⇒
Specs: APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , IKW75N60T , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 .
History: APT80GA60LD40 | RJH1BF7RDPQ-80
Keywords - MPMD100B120RH transistor spec
MPMD100B120RH cross reference
MPMD100B120RH equivalent finder
MPMD100B120RH lookup
MPMD100B120RH substitution
MPMD100B120RH replacement
History: APT80GA60LD40 | RJH1BF7RDPQ-80
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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