All IGBT. APT25GN120B2DQ2G Datasheet

 

APT25GN120B2DQ2G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT25GN120B2DQ2G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 272 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 155 nC
   Package: TO247

 APT25GN120B2DQ2G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT25GN120B2DQ2G Datasheet (PDF)

 0.1. Size:220K  apt
 apt25gn120b2dq2g.pdf

APT25GN120B2DQ2G APT25GN120B2DQ2G

TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B2)have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Maxresults in superior VCE(on) performance. Easy paralleling resu

 3.1. Size:195K  apt
 apt25gn120bg.pdf

APT25GN120B2DQ2G APT25GN120B2DQ2G

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAKconduction loss. Easy paralleling is a re

 3.2. Size:184K  apt
 apt25gn120b.pdf

APT25GN120B2DQ2G APT25GN120B2DQ2G

TYPICAL PERFORMANCE CURVES APT25GN120BAPT25GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , JT075N065WED , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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