All IGBT. IRGP4069D-E Datasheet

 

IRGP4069D-E Datasheet and Replacement


   Type Designator: IRGP4069D-E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 76 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Package: TO247AD
      - IGBT Cross-Reference

 

IRGP4069D-E Datasheet (PDF)

 ..1. Size:309K  international rectifier
 irgp4069d-e.pdf pdf_icon

IRGP4069D-E

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.1. Size:295K  international rectifier
 irgp4069dpbf.pdf pdf_icon

IRGP4069D-E

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.2. Size:309K  international rectifier
 irgp4069d.pdf pdf_icon

IRGP4069D-E

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.1. Size:268K  international rectifier
 irgp4069.pdf pdf_icon

IRGP4069D-E

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

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History: DIM600DDM17-A

Keywords - IRGP4069D-E transistor datasheet

 IRGP4069D-E cross reference
 IRGP4069D-E equivalent finder
 IRGP4069D-E lookup
 IRGP4069D-E substitution
 IRGP4069D-E replacement

 

 
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