All IGBT. IRGP4062D-E Datasheet

 

IRGP4062D-E IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4062D-E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 129 pF
   Qgⓘ - Total Gate Charge, typ: 50 nC
   Package: TO247AD

 IRGP4062D-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4062D-E Datasheet (PDF)

 ..1. Size:434K  international rectifier
 irgp4062d-e.pdf

IRGP4062D-E IRGP4062D-E

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

 0.1. Size:621K  international rectifier
 auirgb4062d auirgp4062d auirgp4062d-e.pdf

IRGP4062D-E IRGP4062D-E

PD - 96353AUIRGB4062DAUIRGP4062DAUIRGP4062D-ECINSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 24A, TC = 100CFeatures Low VCE (on) Trench IGBT TechnologyGtSC 5s, TJ(max) = 175C Low Switching Losses 5s SCSOAE Square RBSOAVCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V

 0.2. Size:554K  infineon
 auirgp4062d auirgp4062d-e.pdf

IRGP4062D-E IRGP4062D-E

AUIRGP4062D AUIRGP4062D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC = 24A, TC = 100C 5s SCSOA GtSC 5s, TJ(max) = 175C Square RBSOA E 100% of The Parts Tested for ILM V typ. = 1.60V CE(on)n-channel

 0.3. Size:415K  infineon
 irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf

IRGP4062D-E IRGP4062D-E

IRGB4062DPbFIRGP4062DPbFIRGP4062D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG tSC 5s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM E

Datasheet: AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IKW50N60T , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 .

 

 
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