IRGP4062D-E Spec and Replacement
Type Designator: IRGP4062D-E
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 48 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 129 pF
Package: TO247AD
IRGP4062D-E Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4062D-E specs
irgp4062d-e.pdf
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒
irgp4062dpbf irgb4062dpbf irgp4062d-epbf.pdf
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E... See More ⇒
auirgb4062d auirgp4062d auirgp4062d-e.pdf
PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V... See More ⇒
Specs: AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , GT30F131 , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 .
Keywords - IRGP4062D-E transistor spec
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