RJH1CF6RDPQ-80 Specs and Replacement
Type Designator: RJH1CF6RDPQ-80
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 227.2 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO247
RJH1CF6RDPQ-80 Substitution - IGBT ⓘ Cross-Reference Search
RJH1CF6RDPQ-80 datasheet
rjh1cf6rdpq-80.pdf
Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2010 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25... See More ⇒
rjh1cf7rdpq-80.pdf
Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2... See More ⇒
rjh1cf5rdpq-80.pdf
Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2... See More ⇒
rjh1cf4rdpq-80.pdf
Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25... See More ⇒
Specs: APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , CRG75T60AK3HD , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG .
History: RJH1BF6RDPQ-80 | RJH60F5BDPQ-A0
Keywords - RJH1CF6RDPQ-80 transistor spec
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History: RJH1BF6RDPQ-80 | RJH60F5BDPQ-A0
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