RJH1CF4RDPQ-80 Datasheet and Replacement
Type Designator: RJH1CF4RDPQ-80
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 156.2 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 24 pF
Package: TO247
RJH1CF4RDPQ-80 substitution
RJH1CF4RDPQ-80 Datasheet (PDF)
rjh1cf4rdpq-80.pdf

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25
rjh1cf7rdpq-80.pdf

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2
rjh1cf6rdpq-80.pdf

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2010Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25
rjh1cf5rdpq-80.pdf

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: NGB8204A | 70MT060WHTAPBF | IXGH120N30C3 | IXGH15N120B2D1 | 2MBI600VE-120-50 | JT015N065FED | 2MBI600VD-060-50
Keywords - RJH1CF4RDPQ-80 transistor datasheet
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RJH1CF4RDPQ-80 substitution
RJH1CF4RDPQ-80 replacement
History: NGB8204A | 70MT060WHTAPBF | IXGH120N30C3 | IXGH15N120B2D1 | 2MBI600VE-120-50 | JT015N065FED | 2MBI600VD-060-50



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