RJH1CF4RDPQ-80 Datasheet. Specs and Replacement

Type Designator: RJH1CF4RDPQ-80  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 156.2 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO247

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RJH1CF4RDPQ-80 datasheet

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RJH1CF4RDPQ-80

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25... See More ⇒

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RJH1CF4RDPQ-80

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2... See More ⇒

 8.2. Size:96K  renesas
 rjh1cf6rdpq-80.pdf pdf_icon

RJH1CF4RDPQ-80

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2010 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25... See More ⇒

 8.3. Size:96K  renesas
 rjh1cf5rdpq-80.pdf pdf_icon

RJH1CF4RDPQ-80

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2... See More ⇒

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Specs: IRGP4062D-E, RJH1BF6RDPQ-80, RJH1CF6RDPQ-80, TGAN40N60FD, TGAN15N120ND, IRG7PH35U-EP, APT15GT60BRDQ1G, APT15GT60BRG, FGH60T65SHD, APT11GF120BRDQ1G, APT11GF120KRG, NGB8245, STGP19NC60H, NGB18N40A, NGB8204A, NGD18N40A, NGB15N41A

Keywords - RJH1CF4RDPQ-80 transistor spec

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