All IGBT. NGD15N41A Datasheet

 

NGD15N41A IGBT. Datasheet pdf. Equivalent


   Type Designator: NGD15N41A
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 107 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 4000 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Package: TO252

 NGD15N41A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGD15N41A Datasheet (PDF)

 ..1. Size:146K  onsemi
 ngd15n41a.pdf

NGD15N41A NGD15N41A

NGD15N41CL,NGD15N41ACL,NGB15N41CL,NGB15N41ACL,NGP15N41CL,NGP15N41ACLhttp://onsemi.comIgnition IGBT 15 A, 410 V15 AMPSN-Channel DPAK, D2PAK and TO-220410 VOLTSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresVCE(on) 3 2.1 V @monolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary

 6.1. Size:167K  onsemi
 ngd15n41cl ngb15n41cl ngp15n41cl.pdf

NGD15N41A NGD15N41A

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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