NGD15N41A Datasheet and Replacement
Type Designator: NGD15N41A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 107 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 4000 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO252
- IGBT Cross-Reference
NGD15N41A Datasheet (PDF)
ngd15n41a.pdf

NGD15N41CL,NGD15N41ACL,NGB15N41CL,NGB15N41ACL,NGP15N41CL,NGP15N41ACLhttp://onsemi.comIgnition IGBT 15 A, 410 V15 AMPSN-Channel DPAK, D2PAK and TO-220410 VOLTSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresVCE(on) 3 2.1 V @monolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary
ngd15n41cl ngb15n41cl ngp15n41cl.pdf

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I
Datasheet: APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , NGB18N40A , NGB8204A , NGD18N40A , NGB15N41A , FGH75T65UPD , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF .
History: 2MBI150UA-120 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | KE703A | IKP20N65H5 | 2N6977
Keywords - NGD15N41A transistor datasheet
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History: 2MBI150UA-120 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | KE703A | IKP20N65H5 | 2N6977



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