NGD15N41A Specs and Replacement
Type Designator: NGD15N41A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 107 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 4000 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO252
NGD15N41A Substitution - IGBT ⓘ Cross-Reference Search
NGD15N41A datasheet
ngd15n41a.pdf
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http //onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary ... See More ⇒
ngd15n41cl ngb15n41cl ngp15n41cl.pdf
NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http //onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include I... See More ⇒
Specs: APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , NGB18N40A , NGB8204A , NGD18N40A , NGB15N41A , RJH60F5DPQ-A0 , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF .
History: MSAGX75F60A
Keywords - NGD15N41A transistor spec
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History: MSAGX75F60A
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