IRGSL6B60K IGBT. Datasheet pdf. Equivalent
Type Designator: IRGSL6B60K
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 90
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.8
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 13
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 17
Maximum Collector Capacity (Cc), pF: 34
Package: TO262
IRGSL6B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGSL6B60K IGBT. Datasheet pdf. Equivalent
Type Designator: IRGSL6B60K
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 90
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.8
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 13
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 17
Maximum Collector Capacity (Cc), pF: 34
Package: TO262
IRGSL6B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGSL6B60K Datasheet (PDF)
0.1. irgsl6b60k.pdf 
Size:249K _international_rectifier
PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 7.0A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc > 10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Con
0.2. irgsl6b60kd.pdf Size:311K _international_rectifier
PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 7.0A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive VCE (
9.1. irgsl4640d.pdf Size:809K _international_rectifier
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC
9.2. irgsl8b60k.pdf Size:472K _international_rectifier
PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 20A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc>10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control
9.3. irgsl4b60k.pdf Size:299K _international_rectifier
PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits
9.4. irgsl4b60kd1.pdf Size:442K _international_rectifier
PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated
9.5. irgsl14c40l.pdf Size:160K _international_rectifier
IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •
9.6. auirgsl30b60k.pdf Size:305K _international_rectifier
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100°C • 10µs Short Circuit Capability at TJ=175°C • Square RBSOA G tsc > 10µs, TJ=150°C • Positive VCE(on) Temperature Coefficient E • Maximum Junction Temperature rated at 175°C VCE(on) typ.
9.7. auirgsl4062d1.pdf Size:415K _international_rectifier
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.
9.8. irgsl15b60kd.pdf Size:332K _international_rectifier
PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V
9.9. irgsl30b60k.pdf Size:339K _international_rectifier
PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100°C • Low VCE (on) Non Punch Through IGBT Technology. at TJ=175°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. VCE(on) typ.
9.10. irgsl10b60kd.pdf Size:111K _international_rectifier
PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V
9.11. irgsl4062d.pdf Size:460K _international_rectifier
PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur
Datasheet: NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRG4BC40U , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D .
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