All IGBT. IRGSL6B60K Datasheet

 

IRGSL6B60K Datasheet and Replacement


   Type Designator: IRGSL6B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 90 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: TO262
 

 IRGSL6B60K substitution

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IRGSL6B60K Datasheet (PDF)

 ..1. Size:249K  international rectifier
irgsl6b60k.pdf pdf_icon

IRGSL6B60K

PD - 94575AIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 7.0A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.Gtsc > 10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Con

 0.1. Size:311K  international rectifier
irgsl6b60kd.pdf pdf_icon

IRGSL6B60K

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (

 9.1. Size:332K  international rectifier
irgsl15b60kd.pdf pdf_icon

IRGSL6B60K

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

 9.2. Size:160K  international rectifier
irgsl14c40l.pdf pdf_icon

IRGSL6B60K

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

Datasheet: NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , GT30F132 , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D .

History: MPBC6N65ESF

Keywords - IRGSL6B60K transistor datasheet

 IRGSL6B60K cross reference
 IRGSL6B60K equivalent finder
 IRGSL6B60K lookup
 IRGSL6B60K substitution
 IRGSL6B60K replacement

 

 
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