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AP20GT60ASP-HF Spec and Replacement


   Type Designator: AP20GT60ASP-HF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 78.1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Package: TO220

 AP20GT60ASP-HF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP20GT60ASP-HF specs

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 ap20gt60asp-hf.pdf pdf_icon

AP20GT60ASP-HF

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 19A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol... See More ⇒

 4.1. Size:95K  ape
 ap20gt60asi-hf.pdf pdf_icon

AP20GT60ASP-HF

AP20GT60ASI-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 12A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter... See More ⇒

 6.1. Size:59K  ape
 ap20gt60p-hf.pdf pdf_icon

AP20GT60ASP-HF

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi... See More ⇒

 6.2. Size:60K  ape
 ap20gt60sw.pdf pdf_icon

AP20GT60ASP-HF

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V... See More ⇒

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Specs: NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , IKW40N65WR5 , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM .

Keywords - AP20GT60ASP-HF transistor spec

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