IRG4BC20FD-S IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC20FD-S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.06

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 37

Package: TO263

IRG4BC20FD-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC20FD-S Datasheet (PDF)

1.1. irg4bc20fd-s.pdf Size:222K _international_rectifier

PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V • Generation 4 IGBT design provides tighter G parameter distribution and higher e

1.2. irg4bc20fd.pdf Size:222K _international_rectifier

PD 91601A I Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V • Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, I

 1.3. irg4bc20f.pdf Size:161K _international_rectifier

D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

1.4. irg4bc20fd-s.pdf Size:290K _igbt_a

PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.66V G Generation 3

 1.5. irg4bc20fd.pdf Size:313K _igbt_a

 IRG4BC20FDPbF Fast CoPack IGBT Features C = G

1.6. irg4bc20f.pdf Size:163K _igbt_a

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VG

Datasheet: IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , 10N50E1D , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD .

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