NTE3301 PDF and Equivalents Search

 

NTE3301 PDF Specs and Replacement


   Type Designator: NTE3301
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: TO220F
 

 NTE3301 Substitution

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NTE3301 PDF specs

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NTE3301

NTE3301 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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NTE3301

NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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NTE3301

NTE3300 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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NTE3301

NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications D High Power Switching D Motor Control Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒

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Specs: IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , FGW75N60HD , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E .

Keywords - NTE3301 transistor spec

 NTE3301 cross reference
 NTE3301 equivalent finder
 NTE3301 lookup
 NTE3301 substitution
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