All IGBT. AP20GT60I Datasheet

 

AP20GT60I IGBT. Datasheet pdf. Equivalent


   Type Designator: AP20GT60I
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO220F

 AP20GT60I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP20GT60I Datasheet (PDF)

 ..1. Size:93K  ape
 ap20gt60i.pdf

AP20GT60I AP20GT60I

AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 6.1. Size:59K  ape
 ap20gt60p-hf.pdf

AP20GT60I AP20GT60I

AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi

 6.2. Size:95K  ape
 ap20gt60asp-hf.pdf

AP20GT60I AP20GT60I

AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 6.3. Size:60K  ape
 ap20gt60sw.pdf

AP20GT60I AP20GT60I

AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V

 6.4. Size:92K  ape
 ap20gt60w.pdf

AP20GT60I AP20GT60I

AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag

 6.5. Size:95K  ape
 ap20gt60asi-hf.pdf

AP20GT60I AP20GT60I

AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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