RJP4301APP-00 Specs and Replacement
Type Designator: RJP4301APP-00
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: TO220F
RJP4301APP-00 Substitution - IGBT ⓘ Cross-Reference Search
RJP4301APP-00 datasheet
rjp4301app-00.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rjp4301app-m0.pdf
Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100 Rev.1.00 Nch IGBT for Strobe Flash Apr 26, 2012 Features VCES 430 V TO-220FL package High Speed Switching Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) 2 1 Gate 2 Collector 1 3 Emitter 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25 C) Parameter Symbo... See More ⇒
Specs: T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , CRG60T60AN3H , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF .
History: RJH60A83RDPP-M0
Keywords - RJP4301APP-00 transistor spec
RJP4301APP-00 cross reference
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RJP4301APP-00 replacement
History: RJH60A83RDPP-M0
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