All IGBT. RJP4301APP-00 Datasheet

 

RJP4301APP-00 Datasheet and Replacement


   Type Designator: RJP4301APP-00
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 33 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO220F
      - IGBT Cross-Reference

 

RJP4301APP-00 Datasheet (PDF)

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RJP4301APP-00

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.1. Size:56K  renesas
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RJP4301APP-00

Preliminary Datasheet RJP4301APP-M0 R07DS0749EJ0100Rev.1.00Nch IGBT for Strobe Flash Apr 26, 2012Features VCES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)21 : Gate2 : Collector13 : Emitter1233Applications Strobe flash Maximum Ratings (Tc = 25C) Parameter Symbo

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - RJP4301APP-00 transistor datasheet

 RJP4301APP-00 cross reference
 RJP4301APP-00 equivalent finder
 RJP4301APP-00 lookup
 RJP4301APP-00 substitution
 RJP4301APP-00 replacement

 

 
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