All IGBT. NGTB40N120FL2 Datasheet

 

NGTB40N120FL2 Datasheet and Replacement


   Type Designator: NGTB40N120FL2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB40N120FL2 Datasheet (PDF)

 ..1. Size:148K  onsemi
 ngtb40n120fl2.pdf pdf_icon

NGTB40N120FL2

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 0.1. Size:145K  onsemi
 ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120FL2

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 2.1. Size:193K  onsemi
 ngtb40n120flwg.pdf pdf_icon

NGTB40N120FL2

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

 2.2. Size:193K  onsemi
 ngtb40n120fl.pdf pdf_icon

NGTB40N120FL2

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: BLG60T65FDL-F | OST40N120HMF | IRGSL6B60K | HGTP10N40F1D | STGD8NC60K | MMGT10CB120XB6C | KGT25N120KDA

Keywords - NGTB40N120FL2 transistor datasheet

 NGTB40N120FL2 cross reference
 NGTB40N120FL2 equivalent finder
 NGTB40N120FL2 lookup
 NGTB40N120FL2 substitution
 NGTB40N120FL2 replacement

 

 
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