All IGBT. NGTB40N120FL2WG Datasheet

 

NGTB40N120FL2WG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB40N120FL2WG

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 535

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 42

Maximum Collector Capacity (Cc), pF: 230

Package: TO247

NGTB40N120FL2WG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

 

NGTB40N120FL2WG Datasheet (PDF)

1.1. ngtb40n120fl2.pdf Size:148K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

1.2. ngtb40n120s.pdf Size:86K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http://onsemi.co

 1.3. ngtb40n120ihr.pdf Size:181K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.4. ngtb40n120ihrwg.pdf Size:181K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

 1.5. ngtb40n120flwg.pdf Size:193K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

1.6. ngtb40n120swg.pdf Size:86K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http://onsemi.co

1.7. ngtb40n120ihl.pdf Size:160K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.8. ngtb40n120fl2wg.pdf Size:148K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

1.9. ngtb40n120fl.pdf Size:193K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

1.10. ngtb40n120ihlwg.pdf Size:160K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.11. ngtb40n120lwg.pdf Size:176K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.12. ngtb40n120l.pdf Size:176K _igbt

NGTB40N120FL2WG
NGTB40N120FL2WG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

Datasheet: RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , IRG4PC50U , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 .

 
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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

 
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