NGTB40N120FL2WG Specs and Replacement
Type Designator: NGTB40N120FL2WG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Package: TO247
NGTB40N120FL2WG Substitution - IGBT ⓘ Cross-Reference Search
NGTB40N120FL2WG datasheet
ngtb40n120fl2wg.pdf
NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒
ngtb40n120fl2.pdf
NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒
ngtb40n120flwg.pdf
NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged ... See More ⇒
ngtb40n120fl.pdf
NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged ... See More ⇒
Specs: RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , IRGP4063D , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 .
Keywords - NGTB40N120FL2WG transistor spec
NGTB40N120FL2WG cross reference
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NGTB40N120FL2WG substitution
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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