NGTB50N120FL2WG Specs and Replacement
Type Designator: NGTB50N120FL2WG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 233 pF
Package: TO247
NGTB50N120FL2WG Substitution
- IGBT ⓘ Cross-Reference Search
NGTB50N120FL2WG datasheet
0.1. Size:106K onsemi
ngtb50n120fl2wg.pdf 
NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒
1.1. Size:109K onsemi
ngtb50n120fl2.pdf
NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒
7.1. Size:87K onsemi
ngtb50n60s1wg.pdf
NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒
7.2. Size:186K onsemi
ngtb50n60flwg.pdf
NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R... See More ⇒
7.3. Size:177K onsemi
ngtb50n60fwg.pdf
NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 50 A, 600 V Low Switching Loss Reduces System Power Dissipation V... See More ⇒
7.4. Size:203K onsemi
ngtb50n60swg.pdf
NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒
7.5. Size:342K onsemi
ngtb50n65fl2wg.pdf
DATA SHEET www.onsemi.com IGBT - Field Stop II 50 A, 650 V VCEsat = 1.80 V NGTB50N65FL2WG Eoff = 0.46 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited fo... See More ⇒
7.6. Size:243K onsemi
ngtb50n60l2.pdf
NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V ... See More ⇒
7.7. Size:237K onsemi
ngtb50n60fl2wg.pdf
NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒
7.8. Size:139K onsemi
ngtb50n60s.pdf
NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack... See More ⇒
7.9. Size:87K onsemi
ngtb50n60s1.pdf
NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com ... See More ⇒
7.10. Size:305K onsemi
ngtb50n60l2wg.pdf
NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V ... See More ⇒
7.11. Size:237K onsemi
ngtb50n60fl2.pdf
NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒
7.12. Size:211K onsemi
ngtb50n65fl2.pdf
NGTB50N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒
Specs: STGF15H60DF
, NGTB30N120L2
, NGTB30N120L2WG
, NGTB40N120FL2
, NGTB40N120FL2WG
, NGTB40N120S
, NGTB40N120SWG
, NGTB50N120FL2
, SGT40N60FD2PN
, NGTG40N120FL2
, NGTG40N120FL2WG
, IKW75N65EL5
, IKZ75N65EL5
, IKW60N60H3
, IGW60N60H3
, NGTB40N60L2
, NGTB40N60L2WG
.
Keywords - NGTB50N120FL2WG transistor spec
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