NGTG40N120FL2 Specs and Replacement
Type Designator: NGTG40N120FL2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Package: TO247
NGTG40N120FL2 Substitution - IGBT ⓘ Cross-Reference Search
NGTG40N120FL2 datasheet
ngtg40n120fl2.pdf
NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒
ngtg40n120fl2wg.pdf
NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features http //onsemi.com Extremely Eff... See More ⇒
Specs: NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , RJH3047 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 .
History: NGTB50N65FL2 | NGTB50N60S1WG | NGTB50N60FL2 | IKW60N60H3
Keywords - NGTG40N120FL2 transistor spec
NGTG40N120FL2 cross reference
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History: NGTB50N65FL2 | NGTB50N60S1WG | NGTB50N60FL2 | IKW60N60H3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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