IKW75N65EL5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKW75N65EL5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEL5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 536 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 436 nC
Package: TO247
IKW75N65EL5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW75N65EL5 Datasheet (PDF)
ikw75n65el5.pdf
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ikw75n65es5.pdf
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aikw75n60ct.pdf
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ikw75n60t.pdf
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ikw75n60trev2 6g.pdf
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ikw75n60h3.pdf
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ikw75n60ta.pdf
IKW75N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CGE Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5
Datasheet: NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , TGAN60N60F2DS , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 .
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