NGTB50N60FL2 PDF and Equivalents Search

 

NGTB50N60FL2 Specs and Replacement

Type Designator: NGTB50N60FL2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 252 pF

Package: TO247

 NGTB50N60FL2 Substitution

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NGTB50N60FL2 datasheet

 ..1. Size:237K  onsemi
 ngtb50n60fl2.pdf pdf_icon

NGTB50N60FL2

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒

 0.1. Size:237K  onsemi
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NGTB50N60FL2

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons... See More ⇒

 3.1. Size:186K  onsemi
 ngtb50n60flwg.pdf pdf_icon

NGTB50N60FL2

NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R... See More ⇒

 4.1. Size:177K  onsemi
 ngtb50n60fwg.pdf pdf_icon

NGTB50N60FL2

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 50 A, 600 V Low Switching Loss Reduces System Power Dissipation V... See More ⇒

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Specs: NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , FGPF4633 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF .

History: IKW60N60H3

Keywords - NGTB50N60FL2 transistor spec

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