NGTB50N60S1 Datasheet and Replacement
Type Designator: NGTB50N60S1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 47 nS
Coesⓘ - Output Capacitance, typ: 252 pF
Package: TO247
- IGBT Cross-Reference
NGTB50N60S1 Datasheet (PDF)
ngtb50n60s1.pdf
NGTB50N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
ngtb50n60s1wg.pdf
NGTB50N60S1WGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.com
ngtb50n60swg.pdf
NGTB50N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
ngtb50n60s.pdf
NGTB50N60SWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pack
Datasheet: IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , GT30F133 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 , IKA08N65H5 .
History: IXGH2N250 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | VS-GA200TH60S | CM150TL-12NF | 7MBR25SA120-01
Keywords - NGTB50N60S1 transistor datasheet
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History: IXGH2N250 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | VS-GA200TH60S | CM150TL-12NF | 7MBR25SA120-01
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