IKA08N65H5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKA08N65H5
Type: IGBT + Anti-Parallel Diode
Marking Code: K08H655
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 31.2 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10.8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 5 nS
Coesⓘ - Output Capacitance, typ: 16 pF
Qgⓘ - Total Gate Charge, typ: 22 nC
Package: TO220F
IKA08N65H5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKA08N65H5 Datasheet (PDF)
ika08n65h5.pdf
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ika08n65et6.pdf
IKA08N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg
ika08n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal
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