All IGBT. IKA15N65F5 Datasheet

 

IKA15N65F5 Datasheet and Replacement


   Type Designator: IKA15N65F5
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 33.3 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 14 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 7 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Package: TO220F
 

 IKA15N65F5 substitution

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IKA15N65F5 Datasheet (PDF)

 ..1. Size:2352K  infineon
ika15n65f5.pdf pdf_icon

IKA15N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

 6.1. Size:2352K  infineon
ika15n65h5.pdf pdf_icon

IKA15N65F5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 6.2. Size:3294K  infineon
ika15n65et6.pdf pdf_icon

IKA15N65F5

IKA15N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 7.1. Size:509K  infineon
ika15n60t.pdf pdf_icon

IKA15N65F5

IKA15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E TRENCHSTOP and Fieldstop technology for 600V applications offers : - ve

Datasheet: NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 , IKA08N65H5 , SGP30N60 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 .

History: MIAA10WE600TMH | FGH50N6S2D | VS-40MT120UHTAPBF | VS-GT100LA120UX | FGH40T65SHDF | IXGX400N30A | BSM50GB120DN2

Keywords - IKA15N65F5 transistor datasheet

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