RJH60V2BDPP-M0 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

RJH60V2BDPP-M0 Specs and Replacement

Type Designator: RJH60V2BDPP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 34 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 37 pF

Package: TO220FL

RJH60V2BDPP-M0 Substitution

- IGBT ⓘ Cross-Reference Search

RJH60V2BDPP-M0 datasheet

..1. Size:100K renesas
rjh60v2bdpp-m0.pdf pdf_icon

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

4.1. Size:95K renesas
rjh60v2bdpe.pdf pdf_icon

Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter Apr 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

8.1. Size:101K renesas
rjh60v3bdpp-m0.pdf pdf_icon

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

8.2. Size:96K renesas
rjh60v3bdpe.pdf pdf_icon

Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒