RJH60V1BDPE PDF and Equivalents Search

 

RJH60V1BDPE Specs and Replacement

Type Designator: RJH60V1BDPE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 52 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 27 pF

Package: TO263

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RJH60V1BDPE datasheet

 ..1. Size:106K  renesas
 rjh60v1bdpe.pdf pdf_icon

RJH60V1BDPE

Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application Inverter May 25, 2011 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 4.1. Size:110K  renesas
 rjh60v1bdpp-m0.pdf pdf_icon

RJH60V1BDPE

Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application Inverter May 25, 2011 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer techn... See More ⇒

 8.1. Size:100K  renesas
 rjh60v2bdpp-m0.pdf pdf_icon

RJH60V1BDPE

Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

 8.2. Size:101K  renesas
 rjh60v3bdpp-m0.pdf pdf_icon

RJH60V1BDPE

Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application Inverter May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

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Specs: RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , RJH60A83RDPE , NGTB75N65FL2 , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF .

History: SKM145GB063DN

Keywords - RJH60V1BDPE transistor spec

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