All IGBT. STGFW30V60DF Datasheet

 

STGFW30V60DF IGBT. Datasheet pdf. Equivalent


   Type Designator: STGFW30V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GFW30V60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 58 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 163 nC
   Package: TO3PF

 STGFW30V60DF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGFW30V60DF Datasheet (PDF)

 ..1. Size:1314K  st
 stgfw30v60df.pdf

STGFW30V60DF STGFW30V60DF

STGFW30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A111 Tight parameters distribution3 Safe paralleling2 Low thermal resistance1 Very fast soft recovery antiparallel diodeTO-3P

 4.1. Size:1472K  st
 stgfw30v60f.pdf

STGFW30V60DF STGFW30V60DF

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

 7.1. Size:432K  st
 stgfw30h65fb stgw30h65fb.pdf

STGFW30V60DF STGFW30V60DF

STGFW30H65FB, STGW30H65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current111 VCE(sat) = 1.55 V (typ.) at IC = 30 A32 31 21 Tight parameters distributionTO-247TO-3PF Safe paralleling Low thermal resistanceApplicati

 7.2. Size:751K  st
 stgfw30nc60v.pdf

STGFW30V60DF STGFW30V60DF

STGFW30NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability111Applications32 High frequency inverters1 UPS, motor driversTO3-PF HF, SMPS and PFC in both hard switch and resonant topologiesDescription

 7.3. Size:1635K  st
 stgfw30h65fb.pdf

STGFW30V60DF STGFW30V60DF

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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