All IGBT. IRG4MC30F Datasheet

 

IRG4MC30F Datasheet and Replacement


   Type Designator: IRG4MC30F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 74 pF
   Package: TO254AA
      - IGBT Cross-Reference

 

IRG4MC30F Datasheet (PDF)

 ..1. Size:195K  international rectifier
irg4mc30f.pdf pdf_icon

IRG4MC30F

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channe

 8.1. Size:142K  international rectifier
irg4mc50u.pdf pdf_icon

IRG4MC30F

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

 8.2. Size:140K  international rectifier
irg4mc50f.pdf pdf_icon

IRG4MC30F

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

 8.3. Size:204K  international rectifier
irg4mc40u.pdf pdf_icon

IRG4MC30F

PD-94305FIRG4MC40U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proofVCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz,G> 200KHz in Resonent Mode High Operating Frequency@VGE =15V, IC = 20AE Switching-loss Rating includes all "tail

Datasheet: STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRGP4062D , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA .

History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50

Keywords - IRG4MC30F transistor datasheet

 IRG4MC30F cross reference
 IRG4MC30F equivalent finder
 IRG4MC30F lookup
 IRG4MC30F substitution
 IRG4MC30F replacement

 

 
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