IRG4MC30F Spec and Replacement
Type Designator: IRG4MC30F
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 28 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 74 pF
Qg ⓘ - Total Gate Charge, typ: 77 nC
Package: TO254AA
IRG4MC30F Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4MC30F specs
irg4mc30f.pdf
PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G High Operating Frequency Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A Ceramic Eyelets n-channe... See More ⇒
irg4mc50u.pdf
PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets... See More ⇒
irg4mc50f.pdf
PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-cha... See More ⇒
irg4mc40u.pdf
PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode High Operating Frequency @VGE =15V, IC = 20A E Switching-loss Rating includes all "tail... See More ⇒
Specs: STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , GT30J122 , IRGB4610D , IRGR4045D , IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA .
Keywords - IRG4MC30F transistor spec
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