All IGBT. IRGR4045D Datasheet

 

IRGR4045D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGR4045D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 77

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 11

Maximum Collector Capacity (Cc), pF: 29

Package: TO252

IRGR4045D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGR4045D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGR4045D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 77

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 11

Maximum Collector Capacity (Cc), pF: 29

Package: TO252

IRGR4045D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGR4045D Datasheet (PDF)

0.1. irgr4045d.pdf Size:341K _international_rectifier

IRGR4045D
IRGR4045D

IRGR4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODE VCES = 600VFeaturesIC 6.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesTjmax = 175C Maximum Junction temperature 175 C G 5s SCSOA Square RBSOAVCE(on) typ. 1.7VE 100% of the parts tested for ILM n-channel Positive VCE (on) Te

0.2. auirgr4045d.pdf Size:453K _international_rectifier

IRGR4045D
IRGR4045D

PD - 97637AUTOMOTIVE GRADEAUIRGR4045DAUIRGU4045DINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT TechnologyIC = 6.0A, TC = 100C Low Switching Losses Maximum Junction temperature 175 C GVCE(on) typ. = 1.7V 5s SCSOA Square RBSOAE 100% of the parts tested for ILM n-channel

 9.1. irgr4610d.pdf Size:428K _international_rectifier

IRGR4045D
IRGR4045D

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

9.2. irgr4607d.pdf Size:858K _international_rectifier

IRGR4045D
IRGR4045D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

Datasheet: STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA , IRG4MC30F , IRGB4610D , GT60M102 , IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF .

 

 
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