All IGBT. NGD8201B Datasheet

 

NGD8201B IGBT. Datasheet pdf. Equivalent


   Type Designator: NGD8201B
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: TO252

 NGD8201B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGD8201B Datasheet (PDF)

 ..1. Size:81K  onsemi
ngd8201b.pdf

NGD8201B
NGD8201B

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 0.1. Size:81K  onsemi
ngd8201bnt4g.pdf

NGD8201B
NGD8201B

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 7.1. Size:121K  1
ngd8201n ngd8201an.pdf

NGD8201B
NGD8201B

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 7.2. Size:123K  onsemi
ngd8201a.pdf

NGD8201B
NGD8201B

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

Datasheet: MMG15H120XB6TN , STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , NGD18N45 , NGD18N45CLBT4G , IRG7IC28U , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 .

 

 
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