IKP20N65H5 Datasheet and Replacement
Type Designator: IKP20N65H5
Type: IGBT + Anti-Parallel Diode
Marking Code: K20EH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 42 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 30 pF
Qgⓘ - Total Gate Charge, typ: 48 nC
Package: TO220
- IGBT Cross-Reference
IKP20N65H5 Datasheet (PDF)
ikp20n65h5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diod
ikp20n65f5.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft anti parallel diodeIKP20N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP20N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft anti par
ikp20n60t ikb20n60t ikw20n60t.pdf

IKP20N60T, IKB20N60T TrenchStop Series IKW20N60TLow Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and F
ikp20n60h3g.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKP20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKP20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat
Datasheet: NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 , IGP20N65H5 , IKP20N65F5 , GT45F122 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , IRGB4620D .
History: MMGT15H120XB6C | BSM50GD170DL | KE703A | 2N6977 | NCE75ED120VTP
Keywords - IKP20N65H5 transistor datasheet
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History: MMGT15H120XB6C | BSM50GD170DL | KE703A | 2N6977 | NCE75ED120VTP



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