STGD19N40LZ PDF and Equivalents Search

 

STGD19N40LZ Specs and Replacement

Type Designator: STGD19N40LZ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 390 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Coesⓘ - Output Capacitance, typ: 85 pF

Package: TO252

 STGD19N40LZ Substitution

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STGD19N40LZ datasheet

 ..1. Size:601K  st
stgd19n40lz.pdf pdf_icon

STGD19N40LZ

STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB 180 mJ of avalanche energy @ TC = 150 C, L = 3 mH 3 ESD gate-emitter protection 1 Gate-collector high voltage clamping Logic level gate drive DPAK Low saturation voltage Hig... See More ⇒

 9.1. Size:888K  st
stgd18n40lz.pdf pdf_icon

STGD19N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3... See More ⇒

 9.2. Size:1071K  st
stgd10nc60sd.pdf pdf_icon

STGD19N40LZ

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of... See More ⇒

 9.3. Size:605K  st
stgd10nc60kd.pdf pdf_icon

STGD19N40LZ

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM... See More ⇒

Specs: IGP20N65H5 , IKP20N65F5 , IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , RJH30E2DPP , KGF15N120NDS , IRGB4620D , IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH .

History: MMIX1X100N60B3H1 | APT40GP90JDQ2

Keywords - STGD19N40LZ transistor spec

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History: MMIX1X100N60B3H1 | APT40GP90JDQ2

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