NGTB15N120FL PDF and Equivalents Search

 

NGTB15N120FL Specs and Replacement

Type Designator: NGTB15N120FL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 156 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 19 nS

Coesⓘ - Output Capacitance, typ: 110 pF

Package: TO247

 NGTB15N120FL Substitution

- IGBT ⓘ Cross-Reference Search

 

NGTB15N120FL datasheet

 ..1. Size:185K  onsemi
 ngtb15n120fl.pdf pdf_icon

NGTB15N120FL

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒

 0.1. Size:185K  onsemi
 ngtb15n120flwg.pdf pdf_icon

NGTB15N120FL

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di... See More ⇒

 0.2. Size:267K  onsemi
 ngtb15n120fl2wg.pdf pdf_icon

NGTB15N120FL

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on... See More ⇒

 0.3. Size:233K  onsemi
 ngtb15n120fl2.pdf pdf_icon

NGTB15N120FL

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa... See More ⇒

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Specs: IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , IKW30N60H3 , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 .

Keywords - NGTB15N120FL transistor spec

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