All IGBT. HGTD3N60B3S Datasheet

 

HGTD3N60B3S Datasheet and Replacement


   Type Designator: HGTD3N60B3S
   Type: IGBT
   Marking Code: G3N60B
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 33.3 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 16 nS
   Qg ⓘ - Total Gate Charge, typ: 18 nC
   Package: TO252
 

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HGTD3N60B3S Datasheet (PDF)

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HGTD3N60B3S

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HGTD3N60B3S

HGTD3N60C3S, HGTP3N60C3Data Sheet December 20016A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1

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HGTD3N60B3S

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HGTD3N60B3S

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Datasheet: HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , GT45F122 , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S .

Keywords - HGTD3N60B3S transistor datasheet

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