All IGBT. STGW20V60DF Datasheet

 

STGW20V60DF IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW20V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GW20V60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 10 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qgⓘ - Total Gate Charge, typ: 116 nC
   Package: TO247

 STGW20V60DF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW20V60DF Datasheet (PDF)

 ..1. Size:2085K  st
stgw20v60df.pdf

STGW20V60DF
STGW20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

 5.1. Size:1613K  st
stgw20v60f.pdf

STGW20V60DF
STGW20V60DF

STGFW20V60F, STGW20V60F, STGWT20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Very high speed switching series3 Tail-less switching off2 Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1TO-3PF@ IC = 20 ATAB Tight parameters distribution Safe par

 8.1. Size:294K  st
stgw20nb60h.pdf

STGW20V60DF
STGW20V60DF

STGW20NB60HN-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60H 600 V

 8.2. Size:1352K  st
stgw20ih125df.pdf

STGW20V60DF
STGW20V60DF

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

 8.3. Size:325K  st
stgp20nb60k stgw20nb60k.pdf

STGW20V60DF
STGW20V60DF

STGP20NB60KSTGW20NB60KN-CHANNEL 20A - 600V - TO-220/TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60K 600 V

 8.4. Size:464K  st
stgb20nc60v stgp20nc60v stgw20nc60v.pdf

STGW20V60DF
STGW20V60DF

STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard

 8.5. Size:90K  st
stgw20nb60hd.pdf

STGW20V60DF
STGW20V60DF

STGW20NB60HD N-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60HD 600 V

 8.6. Size:303K  st
stgw20nc60vd.pdf

STGW20V60DF
STGW20V60DF

STGW20NC60VDN-CHANNEL 30A - 600V TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW20NC60VD 600 V

 8.7. Size:1293K  st
stgw20h60df stgwt20h60df.pdf

STGW20V60DF
STGW20V60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 8.8. Size:312K  st
stgw20nb60kd.pdf

STGW20V60DF
STGW20V60DF

STGW20NB60KDN-CHANNEL 20A - 600V - TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60KD 600 V

 8.9. Size:1497K  st
stgw20h65fb.pdf

STGW20V60DF
STGW20V60DF

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th

 8.10. Size:1293K  st
stgw20h60df.pdf

STGW20V60DF
STGW20V60DF

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

 8.11. Size:1351K  st
stgw20ih125df stgwt20ih125df.pdf

STGW20V60DF
STGW20V60DF

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

 8.12. Size:400K  st
stgw20nc60v.pdf

STGW20V60DF
STGW20V60DF

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi

 8.13. Size:109K  njs
stgw20nb60h.pdf

STGW20V60DF
STGW20V60DF

Datasheet: NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , IRGP4062D , STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP .

 

 
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